• Crss Mosfet Capacitance
• Mosfet Capacitance
• Crss Of Mosfet

Capacitance (C iss/C rss/C oss) In a MOSFET, the gate is insulated by a thin silicon oxide. Therefore, a power MOSFET has　capacitances between the gate-drain, gate-source and drain-source terminals as shown in the figure below. C iss is the input capacitance, C rss is the reverse transfer capacitance, and C oss is the output capacitance. Specifically, a power MOSFET with a lower CRSS has the advantages of high switching speed and a lower loss. However, a power device with a lower CRSS may lead to other technical limitations such as issues caused by high gate ringing, high turning on and turning off. MOSFET channel conducts per Equation 8. P R 1 V V t t I CON DS(on) OUT IN S OUT 2 = × − − +( ) × × DLYUpLo DLYLoUp Wf + I 12 RIPPLE 2 (8) where:. R is the R DS(on) of the selected MOSFET,. I is the RMS current through the MOSFET,. t DLYUpLo is the delay between the upper MOSFET turn-ing off and the lower MOSFET turning on,. Power MOSFET Basics. Crss =Cgd Intrinsic Resistance, Rg: The intrinsic resistance shown in Figure 6 is a part of the total gate resistance with.

This post explains for the transistor 3SK74.

The Part Number is 3SK74.

The function of this semiconductor is MOSFET.

Manufacturers : NEC Electronics

See the preview image and the PDF file for more information.

Image

Description : N-Channel Silicon dual-gate MOSFET

Crss Mosfet Capacitance

Features

1. Suitable for use as RF amplifier & Mixer in VHF TV Tuner
2. Low Crss : 0.03pF Typ.
3. High PG : 22dB Typ.
4. Low NF : 2.0dB Typ.

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Mosfet Capacitance

Absoulte Maximum ratings

1. Drain to Source Voltage : Vdsx = 20 V
2. Gate1 to Source Voltage : Vg1s = ± 10 V
3. Gate2 to Source Voltage : Vg2s = ± 10 V
4. Drain Current : Id = 25 mA
5. Total Power Dissipation : Pt – 200 mW

3SK74 Datasheet

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Crss Of Mosfet